TPCA8109

TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPCA8109 Lithium Ion Battery Applications Power Management Switch Applications 8 Unit: mm 1.27 0.4 ± 0.1 5 0.05 M A Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) 6.0 ± 0.3 5.0 ± 0.2 Small footprint due to small and thin package 0.15 ± 0.05 1 0.95 ± 0.05 4 0.595 0.166 ± 0.05 4 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating −30 −30 −25/+20 −24 −72 30 2.8 Unit 5.0 ± 0.2 V V V A W W 8 5 0.6 ± 0.1 1 4.25 ± 0.2 Pulsed (Note 1) (Tc=25°C) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation (t = 10 s) (Note 2b) 1.6 www.DataSheet.net/ W 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN Single pulse avalanche energy (Note 3) Avalanche current Channel temperature Storage temperature range JEDEC 75 −24 150 −55 to 150 mJ A °C °C ― ― 2-5Q1A JEITA TOSHIBA Weight: 0.076 g (typ.) Note: For Notes 1 to 3, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating te...