< Silicon RF Power MOS FET (Discrete) >
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W
DESCRIPT...
< Silicon RF Power MOS FET (Discrete) >
RD15HVF1
RoHS Compliance, Silicon MOSFET Power
Transistor, 175MHz, 15W
DESCRIPTION
RD15HVF1 is a MOS FET type
transistor specifically designed for VHF/UHF High power amplifiers applica -tions.
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.3+/-0.4
12.3+/-0.6 3.2+/-0.4
4.8MAX 9+/-0.4
FEATURES
High power and High Gain: Pout>15 W, Gp>14 dB @Vds=12.5 V,f=175 MHz
High Efficiency: 60 % (typ) on VHF Band Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
12.3MIN
1.2+/-0.4 0.8+0.10/-0.15
123
2.5 2.5
0.5+0.10/-0.15
3.1+/-0.6 4.5+/-0.5
5deg
PINS
1:GAT E
9.5MAX
2:SOURCE
note: 3:DRAIN
Torelance of no designation means typical value.
Dimension in mm.
RoHS COMPLIANT
RD15HVF1-501 is a RoHS compliant products. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Jun.2019
1
< Silicon RF Power MOS FET (Discrete) >
RD15HVF1
RoHS Compliance, Silicon MOSFET Power
Transistor, 175MHz, 15W
ABSOLUTE MAXIMUM RATINGS (Tc=25°C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
Vdss
Drain to source voltage
Vgs=0V
Vgss
Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input power
Zg=Zl=50
Ids Drain current
-
Tch Channel temperatur...