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RD07MUS2B

Mitsubishi Electric Semiconductor
Part Number RD07MUS2B
Manufacturer Mitsubishi Electric Semiconductor
Description Silicon RF Power MOSFET
Features High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB...
Published Nov 5, 2012
Datasheet PDF File RD07MUS2B PDF File


RD07MUS2B
RD07MUS2B


Features
High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2...



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