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RD01MUS2B

Part Number	RD01MUS2B
Manufacturer	Mitsubishi Electric Semiconductor
Description	Silicon MOSFET Power Transistor
Features	•High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME 0.8 M...
Published	Nov 5, 2012
Datasheet	RD01MUS2B PDF File

Features

•High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME 0.8 MIN 2.5+/-0.1 4.4+/-0.1 1.6+/-0.1 LOT No. 1 0. φ 1.5+/-0.1 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 ...

Similar Datasheet

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RD01MUS2B Silicon MOSFET Power Transistor - Mitsubishi Electric Semiconductor

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