Document
January 2011
SP PGP0380A-Pre eliminary
SPGP0380A
VER : Preliminary_2
( SEMIHOW POWER SWITCH )
FEATURES
Variable frequency operation Low Start-up Current(Typ.100uA ) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 20) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode
Frequency Modulation for low EMI Advanced Burst-Mode Operation
APPLICATION
SMPS for STB, SVR, DVD & DVCD SMPS for Printer, Facsimile & Scanner Adaptor
DESCRIPTION
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The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components. The SemiHow Power Switch consists of a high voltage power SenseFET and a current mode PWM IC. It has a basic platform well suited for the cost effective design in either a flyback converter
INTERNAL BLOCK DIAGRAM
◎ SEMIHOW REV.PLIMILARY” January 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/
SP PGP0380A-Pre eliminary
Absolute Maximum Ratings
Ta=25C, unless otherwise specified
Symbol VDSS ID IDM VGS EAS VCC(MAX) VFB PD TJ TA TSTG Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage
Parameter – Continuous (TC = 25℃) – Continuous ( (TC = 100℃) ) – Pulsed
(Note 1)
Value 800 3.0 2.1 12 ±30
(Note 2)
Units V A A A V mJ V V W W/℃ ℃ ℃ ℃
Single Pulsed Avalanche Energy Maximum Supply voltage Analog Input Voltage Range Power Dissipation (TC = 25℃) - Derate above 25℃ Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range
245 20 -0.3 To VSD 100 0.8 +160 -25 to +85 -55 to +150
Notes : 1 Repetitive Rating : Pulse width limited by maximum junction temperature 1. 2. L=51mH, IAS=3.0A, VDD=50V, RG=25, Starting TJ =25C
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◎ SEMIHOW REV.PLIMILARY” January 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/
SP PGP0380A-Pre eliminary
Electrical Characteristics ( SenseFET Part )
Ta=25C, unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
On Characteristics
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.5 A -4.0 5.0 Ω
Off Characteristics
BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 50 ㎂ VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125℃ 800 ------250 1000 V ㎂ ㎂ ㎊ ㎊ ㎊
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---650 55 12 850 72 15.5
Switching Characteristics
td(on) Tr td(off) d( ff) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Turn Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
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VDS = 400 V, ID = 3.0 A, RG = 25 Ω
(Note 4,5)
--------
20 20 80 40 16 3.5 6.5
----21 ---
㎱ ㎱ ㎱ ㎱ nC nC nC
VDS = 400V, ID = 3.0 A, VGS = 10 V
(Note 4,5)
Notes : 1. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 2.
S
1 R
◎ SEMIHOW REV.PLIMILARY” January 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/
SP PGP0380A-Pre eliminary
Electrical Characteristics ( Control Part )
Ta=25C, unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
UVLO Section
VSTART VSTOP Start Threshold Voltage St Th Stop Threshold h ld V Voltage lt VFB = GND VFB = GND 14 84 8.4 15 9 16 96 9.6 V V
Oscillator Section
FOSC -DMAX Initial Accuracy Frequency Change With Temperature (Note 2) Maximum Duty Cycle -25°C Ta +85°C 57 -73 64 5 77 71 10 82 KHz % %
FEEDBACK Section
IFB VSD Idelay Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current Ta=25°C, 0V6.5V Ta=25°C, 5VVfbVSD 0.7 5.4 4 0.9 6 5 1.1 6.6 6 mA V mA
Reference Section
VREF IOVER Reference Output Voltage (Note 1) Ta=25°C
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4.8 -1.62
5 0.3 2.0
5.2 0.6 2.38
V mV/°C A
Vref/T Temperature Stability (Note 1 , 2) Peak Current Limit
-25°C Ta +85°C Max. inductor current
Protection Section
VOVP TSD Over Voltage Protection Thermal Shutdown Temperature (Tj) (Note 1) VCC 20V -20 140 -160 23 -V °C
Protection Section
ISTART IOP Start-up Current Operating Supply Current (Control Part Only) VCC = 14V VCC 20V --100 3 170 6 mA
Notes : 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process
◎ SEMIHOW REV.PLIMILARY” January 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/
Typical Characteristics ( SenseFET Part )
(SPGP0380A)
SP PGP0380A-Pre eliminary
10
1
10
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
ID, Drain Current [A]
ID, Drain Current [A]
1
150 C
o
* Notes : 1. 300us Pulse Test o 2. TC = 25 C
25 C -25 C
o
o
* Notes : 1. VDS= 30V 2. 300us Pulse Test
10
0
0.1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
7 6 5 4
3
10
RD [], DS(ON) Drain-Sourc .