MGFS38E2527-01

Mitsubishi Semiconductors Preliminary Specifications are subject to change without notice. MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. 4.0 DIM in mm 1.0 FEATURES InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 36dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant Package 4.0 10 9 8 7 6 APPLICATIONS IEEE802.16-2004 IEEE802.16e-2005 GND 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc1, Vcb Vc2 Vc3 Vc4 Pout Vdet GND Vref Vcont X-ray Top View FUNCTIONAL BLOCK DIAGRAM www.DataSheet.net/ Gain control Pin Vcont (0V/3.3V) Power Detector Vc1,Vcb (5V) Bias Circuit Detector Circuit Pout Vdet Vc2(5V) Vref(2.85V) Vc3(5V) Vc4(5V) Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORPORATION (1/21) Rev. 0.5 May -2010 Datasheet pdf - http://www.DataSheet4U.co.kr/ Mitsubishi Semiconductors Prelimina...