Specifications are subject to change without notice.
MGFS36E2325 is a GaAs RF amplifier designed
for WiMAX CPE.
• InGaP HBT Device
• 6V Operation
• 27dBm Linear Output Power
• 33dB Linear Gain
• Integrated Output Power Detector
• Integrated 1-bit 16dB Step Attenuator
• 50ohms Matched
• Surface Mount Package
• RoHS Compliant Package
FUNCTIONAL BLOCK DIAGRAM
2.3-2.5GHz HBT HYBRID IC
10 9 8 7 6
(X-ray Top View)
2 Vc (Vcb)
3 Vc (Vc1)
4 Vc (Vc2)
5 Vc (Vc3)
DIM IN mm
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give
due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,
(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
Datasheet pdf - http://www.DataSheet4U.c