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MGFC47B3538B Dataheets PDF



Part Number MGFC47B3538B
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description C band Internally Matched Power GaAs FET
Datasheet MGFC47B3538B DatasheetMGFC47B3538B Datasheet (PDF)

MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING FEATURES Crass AB operation Internally matched to 50(ohm)  High output power: Po(SAT) = 50 W (typ.)  High power gain: GP = 10 dB (TPE.) @Po = 37dBm  Distortion: EVM = 2.0% (TPE.) @ .

  MGFC47B3538B   MGFC47B3538B


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