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MGFC42V7177

Part Number	MGFC42V7177
Manufacturer	Mitsubishi Electric Semiconductor
Description	C band Internally Matched Power GaAs FET
Features	Crass A operation Internally matched to 50(ohm)  High output power: P1dB = 16 W (typ.) @ P1dB  High power gain: GLP = ...
Published	Nov 1, 2012
Datasheet	MGFC42V7177 PDF File

Features

Crass A operation Internally matched to 50(ohm) 
 High output power: P1dB = 16 W (typ.) @ P1dB 
 High power gain: GLP = 8.0 dB (typ.) 
 High power added efficiency: PAE = 30 % (typ.)

APPLICATIONS

 item 01 : 7.1 – 7.7GHz band power amplifier 
 item ...

Similar Datasheet

MGFC42V7177 C band Internally Matched Power GaAs FET - Mitsubishi Electric Semiconductor

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