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MGFC42V7177 Dataheets PDF



Part Number MGFC42V7177
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description C band Internally Matched Power GaAs FET
Datasheet MGFC42V7177 DatasheetMGFC42V7177 Datasheet (PDF)

MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Crass A operation Internally matched to 50(ohm)  High output power: P1dB = 16 W (typ.) @ P1dB  High power gain: GLP = 8.0 dB (typ.)  High power added efficiency: PAE = 30 % (typ.) APPLICATIO.

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MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Crass A operation Internally matched to 50(ohm)  High output power: P1dB = 16 W (typ.) @ P1dB  High power gain: GLP = 8.0 dB (typ.)  High power added efficiency: PAE = 30 % (typ.) APPLICATIONS  item 01 : 7.1 – 7.7GHz band power amplifier  item 51 : 7.1 – 7.7GHz band digital radio communication QUALITY  IG RECOMMENDED BIAS CONDITIONS  Vds = 10 V  Ids = 4.5 A  Rg = 25  www.DataSheet.net/ Absolute maximum ratings (Ta = 25 C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown -15 ID Drain current 12 IGR Reverse gate current -40 IGF Forward gate current 84 PT *1 Total power dissipation 78.9 Tch Channel temperature 175 Tstg Storage temperature - 65 to +175 *1: Tc=25C Unit V V A mA mA W C C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Electrical characteristics ( Ta = 25° C) Symbol VGS(off) P1dB GLP IDS (RF)  add IM3 *2 Parameter Gate to sourse cut-off voltage 1dB gain comp. output power Linear Power Gain Drain Current at P1dB Power added efficiency 3rd order IM distortion VDS = 10V, ID = 4.5A, f=7.1 – 7.7GHz Test conditions VDS = 3V, ID = 80mA Min. -2 41 7 -42 Limits Typ. -3 42 8 4.5 30 -45 Max. -4 1.9 Unit V dBm dB A % dBc °C/W Rth(ch-c) *3 Thermal resistance Delta Vf Method *2: item -51, 2 tone test, Po=32dBm single carrier level, f=7.7GHz, delta f=10MHz *3 : Channel to case Publication Date : May, 2012 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ MGFC42V7177 7.1 - 7.7GHz BAND / 16W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or.


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