Document
MGFC42V7177
7.1 - 7.7GHz BAND / 16W
DESCRIPTION
The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Crass A operation Internally matched to 50(ohm) High output power: P1dB = 16 W (typ.) @ P1dB High power gain: GLP = 8.0 dB (typ.) High power added efficiency: PAE = 30 % (typ.)
APPLICATIONS
item 01 : 7.1 – 7.7GHz band power amplifier item 51 : 7.1 – 7.7GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds = 10 V Ids = 4.5 A Rg = 25
www.DataSheet.net/
Absolute maximum ratings (Ta = 25 C)
Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown -15 ID Drain current 12 IGR Reverse gate current -40 IGF Forward gate current 84 PT *1 Total power dissipation 78.9 Tch Channel temperature 175 Tstg Storage temperature - 65 to +175 *1: Tc=25C Unit V V A mA mA W C C
Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Electrical characteristics ( Ta = 25° C)
Symbol VGS(off) P1dB GLP IDS (RF) add IM3 *2 Parameter Gate to sourse cut-off voltage 1dB gain comp. output power Linear Power Gain Drain Current at P1dB Power added efficiency 3rd order IM distortion VDS = 10V, ID = 4.5A, f=7.1 – 7.7GHz Test conditions VDS = 3V, ID = 80mA Min. -2 41 7 -42 Limits Typ. -3 42 8 4.5 30 -45 Max. -4 1.9 Unit V dBm dB A % dBc °C/W
Rth(ch-c) *3 Thermal resistance Delta Vf Method *2: item -51, 2 tone test, Po=32dBm single carrier level, f=7.7GHz, delta f=10MHz *3 : Channel to case
Publication Date : May, 2012 1
Datasheet pdf - http://www.DataSheet4U.co.kr/
MGFC42V7177
7.1 - 7.7GHz BAND / 16W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
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