< Low Noise GaAs HEMT >
MGF4936AM
4pin flat lead package
DESCRIPTION
The MGF4936AM super-low noise InGaAs HEMT (High E...
< Low Noise GaAs HEMT >
MGF4936AM
4pin flat lead package
DESCRIPTION
The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.)
Fig.1
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=7mA
ORDERING INFORMATION
General part number: MGF4936AM-75 Tape & reel 15000pcs/reel
www.DataSheet.net/
RoHS COMPLIANT
MGF4936AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25C )
Ratings -3 -3 IDSS 50 125 -55 to +125
(Ta=25C )
Unit V V mA mW C C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)GDO IGSS IDSS VGS(off) Gs Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain
Test conditions MIN. IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500A VDS=2V, -3.5 -12 -0.1 11.0 --
Limits TYP. ----12.0 0.50 MAX -50 60 -1.5 -0.70
Unit V A m...