MGF4921AM

< Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES ・Low noise figure NFmin. = 0.35dB (Typ.) @ f=2.4GHz NFmin. = 0.35dB (Typ.) @ f=4GHz ・High associated gain Gs = 18.0dB (Typ.) @ f=2.4GHz Gs = 13.0dB (Typ.) @ f=4GHz Fig.1 APPLICATION L to C band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10~25mA ORDERING INFORMATION Tape & reel 15000pcs/reel www.DataSheet.net/ RoHS COMPLIANT MGF4921AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Symbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Gs Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Minimum noise figure Associated gain (Ta=25C ) Ratings -3 -3 IDSS 130 125 -55 to +125 (Ta=25C) Unit V V mA mW C C Limits MIN. TYP. ----18 0.35 13 0.35 MAX -50 150 -1.5 ---0.55 V A mA V dB dB dB dB -3.5 -30 -0.2 --11.5 -Unit ELE...