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MGF4921AM

Mitsubishi Electric Semiconductor
Part Number MGF4921AM
Manufacturer Mitsubishi Electric Semiconductor
Description SUPER LOW NOISE InGaAs HEMT
Published Nov 1, 2012
Detailed Description < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT (High E...
Datasheet PDF File MGF4921AM PDF File

MGF4921AM
MGF4921AM

Overview
< Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing FEATURES ・Low noise figure NFmin.
= 0.
35dB (Typ.
) @ f=2.
4GHz NFmin.
= 0.
35dB (Typ.
) @ f=4GHz ・High associated gain Gs = 18.
0dB (Typ.
) @ f=2.
4GHz Gs = 13.
0dB (Typ.
) @ f=4GHz Fig.
1 APPLICATION L to C band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10~25mA ORDERING IN...


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