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MGF4921AM Dataheets PDF



Part Number MGF4921AM
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description SUPER LOW NOISE InGaAs HEMT
Datasheet MGF4921AM DatasheetMGF4921AM Datasheet (PDF)

< Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES ・Low noise figure NFmin. = 0.35dB (Typ.) @ f=2.4GHz NFmin. = 0.35dB (Typ.) @ f=4GHz ・High associated gain Gs = 18.0dB (Typ.) @ f=2.4GHz Gs = 13.0dB (Typ.) @ f=4GHz Fig.1 APPLICATION L to C band .

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