Document
MITSUBISHI SEMICONDUCTORS
M81725FP
HIGH VOLTAGE HIGH SIDE DRIVER
DESCRIPTION M81725FP is high voltage Power MOSFET and IGBT driver for high side applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ............................................ ±3A (typ) ¡UNDERVOLTAGE LOCKOUT ¡INPUT FILTER ¡SOP-8 PACKAGE
1. VCC 2. IN 3. NC 4. GND
8. VB 7. OUT 6. VS 5. NC
APPLICATIONS MOSFET and IGBT driver for PDP,HID lamp, refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose.
Outline:8P2S NC: NO CONNECTION
BLOCK DIAGRAM
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VCC
1 8
VB
VREG
HV LEVEL SHIFT
UV DETECT FILTER R Q INTER LOCK R S
POR
7
OUT
IN
2
VREG/VCC LEVEL SHIFT
FILTER
PULSE GEN
6
VS
GND
4
Aug. 2009 1
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS
M81725FP
HIGH VOLTAGE HIGH SIDE DRIVER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise specified)
Symbol VB VS VBS VOUT VCC VIN Pd Kq Rth(j-c) Tj Topr Tstg TL Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Logic Input Voltage Package Power Dissipation Linear Derating Factor Junction - Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Solder heat-proof(flow) For Pb Free IN Ta = 25°C , On Board Ta > 25°C , On Board VBS = VB-VS Test conditions Ratings –0.5 ~ 624 VB-24 ~ VB+0.5 –0.5 ~ 24 VS–0.5 ~ VB+0.5 –0.5 ~ 24 –0.5 ~ VCC+0.5 0.6 4.8 50 –20 ~ 150 –20 ~ 125 –40 ~ 150 260(10s) Unit V V V V V V W mW/°C °C/W °C °C °C °C
* Please adjust the VS potential to 500V or less when the junction temperature (Tj) exceeds 125°C.
RECOMMENDED OPERATING CONDITIONS
Symbol VB VS VBS VOUT VCC VIN Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Logic Input Voltage IN VB > 10V VBS = VB–VS
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Test conditions
Min. VS+10 –5 10 VS 10 0
Limits Typ. — — — — — —
Max. VS+20 500 20 VB 20 7
Unit V V V V V V
* For proper operation, the device should be used within the recommended conditions.
THERMAL DERATING FACTOR CHARACTERISTIC (ABSOLUTE MAXIMUM RATINGS)
0.7 0.6
Pd (W)
0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150
Ambient Temparature Ta (°C)
Aug. 2009 2
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS
M81725FP
HIGH VOLTAGE HIGH SIDE DRIVER
ELECTRICAL CHARACTERISTICS (Ta = 25°C, Vcc=VBS(=VB-VS)=15V, unless otherwise specified)
Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr
VBSuvt
Parameter Floating Supply Leakage Current VBS standby Current Vcc standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Trip Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time Power-On Reset Voltage Power-On Reset Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance Turn-On Propagation Delay Turn-Off Propagation Delay Turn-On Rise Time Turn-Off Fall Time Input Filter Time
Test conditions VB = VS = 600V IN = 0V IN = 0V IO = 0A, LO, HO IO = 0A, LO, HO IN IN VIN = 5V VIN = 0V
Min. — — 0.1 13.8 — 4.0 — — — 8.0 7.4 0.3 — — 300
Limits Typ.* — 0.2 0.3 14.4 — — — 17 0 8.9 8.2 0.7 7.5 — — 3.0 3.0 10 2.5 200 180 25 20 100 100
Max. 1.0 0.5 0.6 — 0.1 — 0.8 40 1 9.8 9.0 — — 6.0 — — — 20 3.0 280 260 45 35 — —
Unit µA mA mA V V V V µA µA V V V µs V ns A A Ω Ω ns ns ns ns ns ns
VBSuvh tVBSuv VPonr tPonr(FIL) IOH IOL ROH ROL tdLH tdHL tr tf IN(FIL)
VO = 0V, VIN = 5V, PWD < 10µs VO = 15V, VIN = 0V, PWD < 10µs IO = –200mA, ROH = (VOH–VO)/IO IO = 200mA, ROL = VO/IO CL = 1000pF between OUT-Vs CL = 1000pF between OUT-Vs CL = 1000pF between OUT-Vs CL = 1000pF between OUT-Vs
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2.0 2.0 — — — — — — — —
CONVEX PULSE : IN CONCAVE PULSE : IN
* Typ. is not specified
Aug. 2009 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS
M81725FP
HIGH VOLTAGE HIGH SIDE DRIVER
TIMING REQUIREMENT
IN
50%
50%
tdLH
tr
tdHL
tf
OUT
90%
90%
10%
10%
FUNCTION TABLE
IN H →L L→H X VBS UV H H L OUT L H L OUT = Low OUT = High OUT = Low, VBS UV tripped
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Behavioral state
Note1 : “L” state of VBS UV, Vcc UV means that UV trip voltage. 2 : X (IN) : L→H or H→L. 3 : Output signal (HO) is triggered by the edge of input signal.
IN
HO
Aug. 2009 4
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS
M81725FP
HIGH VOLTAGE HIGH SIDE DRIVER
Operation sequence Diagram
VCC
VBS UVTrip VBS VBSuvt
VBS UVReset VBSuvr
VPonrReset
VPonr
IN tVBSuv tPonr (FIL.