Document
MITSUBISHI SEMICONDUCTORS
M81735FP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION M81735FP is high voltage Power MOSFET and IGBT module driver for half bridge applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES ●FLOATING SUPPLY VOLTAGE ・・・・・・・・600V ●OUTPUT CURRENT ・・・・・・・・+600mA/-570mA ●HALF BRIDGE DRIVER ●UNDERVOLTAGE LOCKOUT ●SOP-16 PACKAGE APPLICATIONS MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, AC servomotor and general purpose.
Outline:16P2N
NC: No Connection
BLOCK DIAGRAM
7
VREG
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VB
HV LEVEL SHIFT
Ponr
UV DETECT FILTER
RQ R S
HIN
12
VREG/ VCC Level Shfit
INTER LOCK PULSE GEN
8
HO
6 3
VS VCC
LIN
14
VREG/ VCC Level Shfit
UV DETECT FILTER
Ponr
1
LO
DELAY
GND
15 2
GND
Jul. 2010
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS
M81735FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise specified)
Symbol VB VS VBS VHO VCC VLO VIN dVS/dt Pd Kθ Rth(j-c) Tj Topr Tstg TL Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Allowable Offset Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Solder Heatproof Test conditions
Ratings
-0.5~624 VB-24~VB+0.5 -0.5~24 VS -0.5~VB+0.5 -0.5~24 -0.5~ VCC +0.5 -0.5~ VCC +0.5 ±50 0.9 -7.2 50 -40~150 -40~125 -55~150 255:10s,max 260
Unit V V V V V V V V/ns W mW/°C °C/W ℃ ℃ ℃ ℃
VBS=VB-VS
HIN, LIN Ta= 25 °C ,On Board Ta> 25 °C ,On Board
RoHS Correspondence
RECOMMENDED OPERATING CONDITIONS
Symbol VB VS VBS VHO VCC VLO VIN Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Test conditions Min. VS+10 -5 10 VS 10 0 0 Limits Typ. — — — — — — — Max. VS+20 500 20 VB 20 VCC VCC Unit V V V V V V V
VB>10V VBS=VB-VS
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HIN, LIN
* For proper operation, the device should be used within the recommended conditions
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
Package Power Dissipation Pd (W)
1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150
Temperature Ta(oC)
Jul. 2010 2
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS
M81735FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25°C,VCC=VBS(=VB-VS)=15V, unless otherwise specified)
Symbol IFS IBS ICC VOH VOL VIH VIL VINh IIH IIL VBSuvr VBSuvh tVBSuv VCCuvr VCCuvh tVCCuv IOH IOL ROH ROL Vponr tPonr(FIL) tdLH(HO) tdHL(HO) trH tfH tdLH(LO) tdHL(LO) trL tfL ∆tdLH ∆tdHL Parameter Floating Supply Leakage Current VBS Standby Current VCC Standby Current High Level Output Voltage Low Le.