STRH100N6

STRH100N6 Datasheet Rad-Hard 60 V, 40 A, N-channel Power MOSFET 1 2 3 TO-254AA D(1) Features VDS ID 60 V 40 A Fast switching 100% avalanche tested Hermetic package 50 krad TID SEE radiation hardened RDS(on) typ. 12 mΩ Qg 134.4 nC G(3) S(2) Product status link STRH100N6 SC30150 Description The STRH100N6 is an N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/022 and available in a TO-254AA hermetic package it is specifically recommended for space and harsh environment applications and suitable for in-Satellite power conversion, motor control, and power switch circuits. In a case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part number STRH100N6HY1 STRH100N6HYG STRH100N6HYT Product summary Quality level ESCC part number Package Engineering model Flight model 5205/022 TO-254AA Flight model Lead finish Gold Solder dip Radiation level - 50 krad Note: See Ordering information for ordering information. DS7071 - Rev 11 - July 2022 For further information contact your local STMicroelectronics sales office. www.st.com STRH100N6 Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Table 1. Absolute maximum ratings (pre-ir...