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STPS6045HR Dataheets PDF



Part Number STPS6045HR
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Aerospace 2 x 30 A - 45 V Schottky rectifier
Datasheet STPS6045HR DatasheetSTPS6045HR Datasheet (PDF)

STPS6045HR Aerospace 2 x 30 A - 45 V Schottky rectifier Features ■ ■ ■ ■ ■ ■ ■ ■ ■ Forward current: 2 x 30 A Repetitive peak voltage: 45 V Low forward voltage drop: 0.75 V Maximum junction temperature: 175 °C Negligible switching losses Low capacitance High reverse avalanche surge capability Hermetic package Target radiation qualification: – 150 krad (Si) low dose rate – 1 Mrad high dose rate ESCC qualified STPS6045CFSY1 STPS6045CFSYHRB TO-254 Figure 1. Device configuration ■ Description T.

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STPS6045HR Aerospace 2 x 30 A - 45 V Schottky rectifier Features ■ ■ ■ ■ ■ ■ ■ ■ ■ Forward current: 2 x 30 A Repetitive peak voltage: 45 V Low forward voltage drop: 0.75 V Maximum junction temperature: 175 °C Negligible switching losses Low capacitance High reverse avalanche surge capability Hermetic package Target radiation qualification: – 150 krad (Si) low dose rate – 1 Mrad high dose rate ESCC qualified STPS6045CFSY1 STPS6045CFSYHRB TO-254 Figure 1. Device configuration ■ Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is ideal for use in applications for aerospace and other harsh environments. The STPS6045HR is intended for use in medium voltage applications and in high frequency circuits where low switching losses and low noise are required. Table 1. Device summary ESCC part number 5106/018/01 Quality level Engineering model ESCC flight 1 www.DataSheet.net/ Terminal 1: Anode a Terminal 2: Common cathode Terminal 3: Anode b 2 3 The case is not connected to any lead Order code STPS6045CFSY1 STPS6045CFSYHRB EPPL - Comment Package Lead finish Gold Single die - TO-254 Solder dip November 2010 Doc ID 18184 Rev 1 1/8 www.st.com 8 Datasheet pdf - http://www.DataSheet4U.co.kr/ Characteristics STPS6045HR 1 Characteristics Table 2. Symbol Absolute maximum ratings Characteristic Forward surge current (per diode)(1) Repetitive peak reverse voltage Repetitive peak reverse current (2) Value 300 45 1 30 40 30 -65 to +175 +175 Unit A V A A A °C °C °C °C V/µs IFSM VRRM IRRM IO IF(RMS) TOP TJ TSTG TSOL dV/dt (3) Average output rectified current (50% duty cycle):(4) (5) per diode per device Forward rms current (per diode) Operating temperature range(6) (case temperature) Junction temperature Storage temperature range(6) -65 to +175 +260 10000 Soldering temperature(7) Critical rate of rise of reverse voltage 1. Sinusoidal pulse of 10 ms duration 2. Pulsed, duration 5 ms, F = 50 Hz 3. Pulsed, duration 2 µs, F = 1 kHz 4. For Tcase > +138 °C per device and Tcase > +144 °C per device, derate linearly to 0 A at +175 °C. 5. The per device ratings apply only when both anode terminals are tied together. 6. For solder dip lead finish devices all testing performed at Tamb > +125 °C shall be carried out in a 100% inert atmosphere. 7. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same lead shall not be resoldered until 3 minutes have elapsed. www.DataSheet.net/ Table 3. Symbol Thermal resistance Characteristic Thermal resistance, junction to case per diode per device(2) Value Unit Rth(j-c)(1) 1.7 1.2 °C/W 1. Package mounted on infinite heatsink 2. The per device ratings apply only when both anode terminals are tied togther. 2/8 Doc ID 18184 Rev 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ STPS6045HR Table 4. Symbol s Characteristics Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C Characteristic Reverse current MIL-STD-750 test method 4016 Values Test conditions Min. DC method, VR = 45V Pulse method, IF = 5 A Forward voltage 4011 Pulse method, IF = 10 A Pulse method, IF = 20 A Pulse method, IF = 35 A Capacitance Relative thermal impedance, junction to case 4001 3101 VR = 5 V, F = 1 MHz IH = 15 to 40 A, tH = 50 ms IM = 50 mA, tmd = 100 µs Max. 500 520 590 650 820 1.3 nF °C/W µA mV mV mV Units IR VF1 (1) VF2(1) VF3 VF4 (1) (1) C Zth(j-c)(2) Calculate ΔVF(3) 1. Pulse width ≤ 300 µs, Duty Cycle ≤ 2% 2. Performed only during screening tests parameter drift values (initial measurements), go-no-go 3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and shall guarantee the Rth(j-c) limits specified in maximum ratings. Table 5. Symbol Electrical measurements at high and low temperatures (per diode) Characteristic MIL-STD-750 test method 4016 Test conditions(1) Tcase = +125 (+0, -5) °C DC method, VR = 45 V www.DataSheet.net/ Values Units Min. Max. 40 530 610 800 790 mA mV mV mV mV IR VF2(2) Reverse current Tcase = +125 (+0, -5) °C pulse method, IF = 10 A Tcase = +125 (+0, -5) °C pulse method, IF = 20 A Tcase = -55 (+0, -5) °C pulse method, IF = 20 A Tcase = +125 (+0, -5) °C pulse method, IF = 35 A VF3(2) Forward voltage 4011 VF4(2) 1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a 100% inspection may be performed. 2. Pulse width ≤ 300 µs, duty cycle ≤ 2% Doc ID 18184 Rev 1 3/8 Datasheet pdf - http://www.DataSheet4U.co.kr/ Package Information STPS6045HR 2 Package Information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. E.


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