High-voltage high and low side driver
■ High voltage rail up to 600 V
■ dV/dt immunity ± 50 V/nsec in full temperature
■ Driver current capability:
– 270 mA source
– 430 mA sink
■ Switching times 75/35 nsec rise/fall with 1 nF
■ 3.3 V, 5 V TTL/CMOS inputs with hysteresis
■ Integrated bootstrap diode
■ Operational amplifier for advanced current
■ Adjustable dead-time
■ Interlocking function
■ Compact and simplified layout
■ Bill of material reduction
■ Flexible, easy and fast design
The L6392 is a high-voltage device, manufactured
with the BCD “OFF-LINE" technology. It has a
monolitich half-bridge gate driver for N-channel
Power MOSFET or IGBT.
The high side (floating) section is designed to
stand a voltage rail up to 600 V. The logic inputs
are CMOS/TTL compatible down to 3.3 V for easy
of interfacing microcont roller/DSP
The IC embeds an op amp suitable for advanced
current sensing in applications such as field
oriented motor control.
Table 1. Device summary
Tape and reel
This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
Datasheet pdf - http://www.DataSheet4U.co.kr/