2N3700HR

2N3700HR Datasheet Rad-Hard 80 V, 1 A NPN transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10450 Product status link 2N3700HR Note: Features VCEO IC(max.) 80 V 1A Hermetic packages ESCC qualified 100 krad hFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N3700HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/004 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part-number 2N3700RUBx 2N3700UBx SOC3700RHRx SOC3700HRx Product summary ESCC specification 5201/004 See Table 7 for ordering information. Package UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - DS6085 - Rev 15 - January 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCBO VCEO VEBO IC Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Parameter PTOT Total dissipation at Tamb ≤ 25 ...