2N3700HR
Datasheet
Rad-Hard 80 V, 1 A NPN transistor
3
1 2
LCC-3
3 4
1 2
UB
Pin 4 in UB is connected to the metalli...
2N3700HR
Datasheet
Rad-Hard 80 V, 1 A
NPN transistor
3
1 2
LCC-3
3 4
1 2
UB
Pin 4 in UB is connected to the metallic lid.
C (3)
(2) B
E (1)
DS10450
Product status link 2N3700HR
Note:
Features
VCEO
IC(max.)
80 V
1A
Hermetic packages ESCC qualified 100 krad
hFE at 10 V, 150 mA > 100
Tj(max.) 200 °C
Description
The 2N3700HR is a bipolar
transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
Qualified as per ESCC 5201/004 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Part-number
2N3700RUBx 2N3700UBx SOC3700RHRx SOC3700HRx
Product summary ESCC
specification
5201/004
See Table 7 for ordering information.
Package
UB UB LCC-3 LCC-3
Radiation level
100 krad -
100 krad -
DS6085 - Rev 15 - January 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol VCBO VCEO VEBO IC
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current
Parameter
PTOT
Total dissipation at Tamb ≤ 25 ...