2N2907AHR

2N2907AHR Datasheet Rad-hard 60 V, 0.6 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10460 Product status link 2N2907AHR Features VCBO IC(max.) 60 V ESCC Hermetic packages ESCC qualified 100 krad 0.5 A HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part-number 2N2907ARUBx 2N2907AUBx SOC2907ARHRx SOC2907AHRx Product summary Qualification system Agency specification ESCC Flight 5202/001 ESCC Flight 5202/001 ESCC Flight 5202/001 ESCC Flight 5202/001 Note: See Table 7 for ordering information. Package UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - DS6095 - Rev 14 - February 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Note: Electrical ratings For PNP transistor voltage and current polarity is reversed. Table 1. Absolute maximum ratin...