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AV3906 TO-92 Plastic-Encapsulate Transistors
AV3906 TRANSISTOR( PNP )
FEATURES Power dissipation PCM : 0.625 W(Ta...
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AV3906 TO-92 Plastic-Encapsulate
Transistors
AV3906
TRANSISTOR(
PNP )
FEATURES Power dissipation PCM : 0.625 W(Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃
TO—92
1. EMITTER 2. BASE
3. COLLECTOR
1
2 3
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEo IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE= -1 V , IC=-50 mA IC= -50 mA, IB= -5mA IC= -50mA, IB= -5 mA VCE= -20 V, IC= -10 mA 60 -0.4 -0.95 V V Test conditions Ic= -100 μA , IE=0 IC= -1 mA , IB=0
www.DataSheet.net/
MIN -40 -40 -5
MAX
UNIT V V V
IE= -100 μA, IC=0 VCB= -40 V , IE=0 VCB= -40 V , IB=0 VEB= -5 V , IC=0 VCE= -1 V , IC= -10 mA
-0.1 -0.1 -0.1 100 300
μA μA μA
Transition frequency
fT
f =100 MHz
250
MHz
CLASSIFICATION OF HFE(1)
Rank
Range
O 100-200
Y 200-300
G 300-400
Copyright © Avic Electronics Corp.
1
Website: http://www.avictek.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
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TYPICAL PERFORMANCE CHARACTERISTICS
hEF, DC CURRENT GAIN (NORMALIZED) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
TJ = +125°C +25°C -55°C
AV3906
VCE...