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SDT06S60 Dataheets PDF



Part Number SDT06S60
Manufacturers Infineon
Logo Infineon
Description Silicon Carbide Schottky Diode
Datasheet SDT06S60 DatasheetSDT06S60 Datasheet (PDF)

SDP06S60 SDT06S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 1200W 1) • No forward recovery thinQ!¥ SiC Schottky Diode Product Summary VRRM Qc IF PG-TO220-2-2. 600 21 6 P-TO220 V nC A Type SDP06S60 SDT06S60 Package P-TO220-3 PG-TO220-2-2. Ordering Code Q67040-.

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SDP06S60 SDT06S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 1200W 1) • No forward recovery thinQ!¥ SiC Schottky Diode Product Summary VRRM Qc IF PG-TO220-2-2. 600 21 6 P-TO220 V nC A Type SDP06S60 SDT06S60 Package P-TO220-3 PG-TO220-2-2. Ordering Code Q67040-S4371 www.DataSheet.net/ Marking D06S60 D06S60 Pin 1 n.c. Pin 2 C Pin 3 A Q67040-S4446 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Value 6 8.4 21.5 28 60 2.3 600 600 57.6 -55... +175 Unit A IF IFRMS Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ³i2dt VRRM VRSM Ptot Tj , Tstg Page 1 Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature Rev. 2.4 A²s V W °C 2008-06-02 Datasheet pdf - http://www.DataSheet4U.co.kr/ SDP06S60 SDT06S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA Symbol min. - Values typ. max. 2.6 62 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=6A, Tj=25°C IF=6A, Tj=150°C Symbol min. VF IR www.DataSheet.net/ Values typ. max. Unit V 1.5 1.7 20 50 1.7 2.1 µA 200 1000 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C 1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30% IN j C IN 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Page 2 2008-06-02 Datasheet pdf - http://www.DataSheet4U.co.kr/ SDP06S60 SDT06S60 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C Unit max. nC ns pF typ. 21 n.a. Qc trr C - Switching time V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C Total capacitance V R=0V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz - 300 20 15 - www.DataSheet.net/ Rev. 2.4 Page 3 2008-06-02 Datasheet pdf - http://www.DataSheet4U.co.kr/ SDP06S60 SDT06S60 1 Power dissipation Ptot = f (TC) 60 2 Diode forward current IF = f (TC) parameter: Tj≤175 °C 6.5 W 50 45 A 5.5 5 4.5 Ptot 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 IF °C 180 TC 4 3.5 3 2.5 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140 www.DataSheet.net/ °C 180 TC 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs 12 4 Typ. forward .


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