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SDP06S60 SDT06S60
Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 1200W 1) • No forward recovery
thinQ!¥ SiC Schottky Diode
Product Summary VRRM Qc IF
PG-TO220-2-2.
600 21 6
P-TO220
V nC A
Type SDP06S60 SDT06S60
Package P-TO220-3 PG-TO220-2-2.
Ordering Code Q67040-S4371
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Marking D06S60 D06S60
Pin 1 n.c.
Pin 2 C
Pin 3 A
Q67040-S4446
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp=10ms
Value 6 8.4 21.5 28 60 2.3 600 600 57.6 -55... +175
Unit A
IF IFRMS
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM IFMAX ³i2dt VRRM VRSM Ptot Tj , Tstg
Page 1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature
Rev. 2.4
A²s V W °C
2008-06-02
Datasheet pdf - http://www.DataSheet4U.co.kr/
SDP06S60 SDT06S60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded
RthJC RthJA
Symbol min. -
Values typ. max. 2.6 62
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage
IF=6A, Tj=25°C IF=6A, Tj=150°C
Symbol min. VF IR
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Values typ. max.
Unit
V 1.5 1.7 20 50 1.7 2.1 µA 200 1000
Reverse current
V R=600V, T j=25°C V R=600V, T j=150°C
1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30% IN j C IN 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
Rev. 2.4
Page 2
2008-06-02
Datasheet pdf - http://www.DataSheet4U.co.kr/
SDP06S60 SDT06S60
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge
V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C
Unit max. nC ns pF
typ. 21 n.a.
Qc trr C
-
Switching time
V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C
Total capacitance
V R=0V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz
-
300 20 15
-
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Rev. 2.4
Page 3
2008-06-02
Datasheet pdf - http://www.DataSheet4U.co.kr/
SDP06S60 SDT06S60
1 Power dissipation
Ptot = f (TC)
60
2 Diode forward current IF = f (TC) parameter: Tj≤175 °C
6.5
W
50 45
A
5.5 5 4.5
Ptot
40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140
IF °C 180 TC
4 3.5 3 2.5 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140
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°C 180 TC
3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs
12
4 Typ. forward .