TECHNICAL DATA
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455 Devices 2N5664 2N5665 Qualified Le...
TECHNICAL DATA
NPN POWER SILICON SWITCHING
TRANSISTOR
Qualified per MIL-PRF-19500/455 Devices 2N5664 2N5665 Qualified Level JAN JANTX JANTXV Devices 2N5666 2N5666S 2N5667 2N5667S Qualified Level JAN JANTX JANTXV JANS
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
2N5664 2N5665 Symbol 2N5666, S 2N5667, S Unit
VCEO VCBO VEBO IB IC 200 250 6.0 1.0 5.0 2N5664 2N5666, S 2N5665 2N5667, S 2.5 (1) 1.2 (2) (3) 30 15 (4) -65 to +200 300 400 Vdc Vdc Vdc Adc Adc
TO-66* (TO-213AA) 2N5664, 2N5665
@ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 1) Derate linearly 14.3 mW/0C for TA > +250C 2) Derate linearly 6.9 mW/0C for TA > +250C 3) Derate linearly 300 mW/0C for TC >+1000C 4) Derate linearly 150 mW/0C for TC > +1000C Total Power Dissipation
PT TJ, Tstg
W W 0 C
TO-5* 2N5666, 2N5667
TO-39* (TO-205AD) 2N5666S, 2N5667S
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Cutoff Current VCE = 200 Vdc VCE = 300 Vdc 2N5664, 2N5666, S 2N5665, 2N5667, S V(BR)CER 250 400 6.0 0.2 0.2 Vdc
V(BR)EBO 2N5664, 2N5666, S 2N5665, 2N5667, S ICES
Vdc µAdc
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2N5664, 2N5665, 2N5666...