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TQP7M9106 Dataheets PDF



Part Number TQP7M9106
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description 2W High Linearity Amplifier
Datasheet TQP7M9106 DatasheetTQP7M9106 Datasheet (PDF)

TQP7M9106 Applications • • • • • 2W High Linearity Amplifier Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features • • • • • • • • • • 50-1500 MHz +33 dBm P1dB at 940 MHz +50 dBm Output IP3 at 940 MHz 20.8 dB Gain at 940 MHz +5V Single Supply, 455 mA Current Patented internal RF overdrive protection Patented internal DC overvoltage protection On chip ESD protection Shut-down capability Capable of handlin.

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TQP7M9106 Applications • • • • • 2W High Linearity Amplifier Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features • • • • • • • • • • 50-1500 MHz +33 dBm P1dB at 940 MHz +50 dBm Output IP3 at 940 MHz 20.8 dB Gain at 940 MHz +5V Single Supply, 455 mA Current Patented internal RF overdrive protection Patented internal DC overvoltage protection On chip ESD protection Shut-down capability Capable of handling 10:1 VSWR at 5Vcc, 0.9GHz, 33 dBm CW Pout or 23.5 dBm WCDMA Pout www.DataSheet.net/ Functional Block Diagram GND/NC GND/NC GND/NC GND/NC GND/NC 20 GND/NC 19 Vbias GND/NC GND/NC RFin RFin GND/NC 1 2 3 4 5 6 24 23 22 21 18 17 16 15 14 13 Iref GND/NC RFout/Vcc RFout/Vcc RFout/Vcc GND/NC 10 11 GND/NC GND/NC GND/NC GND/NC General Description The TQP7M9106 is a high linearity, high gain 2W driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP/GaAs HBT delivers high performance across 0.05 to 1.5 GHz range of frequencies while achieving 20.8 dB gain, +50 dBm OIP3 and +33 dBm P1dB at 940MHz while only consuming 455 mA quiescent current. All devices are 100% RF and DC tested. The TQP7M9106 incorporates patented on-chip circuit techniques that differentiate it from other products in the market. The amplifier integrates an on-chip DC overvoltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. The TQP7M9106 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device is an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multi-carrier 3G / 4G base stations. Pin Configuration Pin # 1 4, 5 14, 15, 16 18 2, 3, 6-13, 17, 19-24 GND/NC Symbol Vbias RFin RFout/Vcc Iref GND/NC Ordering Information Part No. TQP7M9106 TQP7M9106-PCB900 1 W High Linearity Amplifier 920-960 MHz EVB Description Standard T/R size = 2500 pieces on a 13” reel. Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® Advanced Data Sheet: Rev C 8/9/12 © 2012 TriQuint Semiconductor, Inc. - 1 of 8 - GND/NC 12 7 8 9 Datasheet pdf - http://www.DataSheet4U.co.kr/ TQP7M9106 Specifications 2W High Linearity Amplifier Absolute Maximum Ratings Parameter Storage Temperature Device Voltage, Vcc Maximum Input Power (CW, ZL=50Ω, T=25°C) -65 to +150°C +8 V +30 dBm Recommended Operating Conditions Parameter Vcc Tcase Tj (for>106 hours MTTF) Rating Min Typ Max +5 -40 +5.25 +85 +170 Units V °C °C Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 WCDMA Channel Power Noise Figure Supply Voltage, Vcc Quiescent Current, Icq Reference Current, Iref Thermal Resistance (junction to base) Test conditions unless otherwise noted: Vcc=+5 V, T=+25°C, 50 Ω system, tuned application circuit Conditions Min 50 Typ 940 20.8 9.2 12.7 +33.1 Max 1500 Units MHz MHz dB dB dB dBm Pout=+17 dBm/tone, Δf=1 MHz ACLR= −50 dBc (1) www.DataSheet.net/ +50.3 +23.5 4.8 +5 455 8.9 17.2 dBm dBm dB V mA mA °C/W Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob. Advanced Data Sheet: Rev C 8/9/12 © 2012 TriQuint Semiconductor, Inc. - 2 of 8 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® Datasheet pdf - http://www.DataSheet4U.co.kr/ TQP7M9106 2W High Linearity Amplifier Device Characterization Data 30 25 20 15 10 5 0 Gain & Max Stable Gain Gain Gmax Input reflection coefficients 1 0.8 Output reflection coefficients 1 0.8 0.6 0.6 0.4 0.4 Gain (dB) 0.2 0.2 0 0 -1 -0.75 -0.5 -0.25 -0.2 0 0.25 0.5 0.75 1 -1 -0.75 -0.5 -0.25 -0.2 0 0.25 0.5 0.75 1 -0.4 -0.4 -0.6 -0.6 -0.8 -0.8 0 0.5 1 Frequency (GHz) 1.5 2 2.5 3 3.5 4 -1 -1 Note: The gain for the unmatched device in 50 ohm system is shown as the trace in black color, [gain (S(21)]. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown as the blue trace [Gmax]. The impedance plots are shown from 0.05 – 4 GHz. S-Parameter Data Freq (GHz) 0.05 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 S11 (dB) -0.44 -0.52 -0.50 -0.54 -0.53 -0.56 -0.62 -0.72 -0.89 -1.08 -1.27 -1.38 -1.48 -1.62 -1.90 -2.39 -3.38 -5.41 -8.79 -7.36 -3.69 -2.78 Vcc = +5 V, Icq =450 mA, T = +25°C, unmatched 50 .


STX-25442 TQP7M9106 ADM4168E


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