SSM3J321T

SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V) Ron = 62mΩ (max) (@VGS = -2.5 V) Ron = 46mΩ (max) (@VGS = -4.5 V) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 2.9±0.2 1.9±0.2 0.95 0.95 0～0.1 0.15 0.16±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit １ ２ ３ Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDSS -20 V VGSS ±8 V ID (Note 1) -5.2 A IDP (Note 1) -10.4 PD (Note 2) 700 mW t=10s 1250 Tch 150 °C Tstg −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 0.7±0.05 TSM 1: Gate 2: Source 3: Drain JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10mg (typ.) Note 1:...