MMIX1F44N100Q3

Advance Technical Information HiperFETTM Power MOSFET Q3-Class (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C MMIX1F44N100Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 30A 245mΩ 300ns D G S Maximum Ratings 1000 1000 ±30 ±40 30 110 44 4 50 694 -55 ... +150 150 -55 ... +150 www.DataSheet.net/ V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb. g Features Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG z Isolated Tab D TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C S G G = Gate S = Source D = Drain 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force 300 260 2500 50..200 / 11..45 8 Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 22A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 V V Applications z z z z z z High Power Density Easy to Mount Space Savings ±...