AP2531GY

AP2531GY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge Drive ▼ Low On-resistance ▼ Surface Mount Package ▼ RoHS Compliant SOT-26 S2 G1 S1 D1 G2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 16V 58mΩ 3.5A -16V 125mΩ -2.5A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings www.DataSheet.net/ Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 16 ±8 3.5 2.8 10 1.14 0.01 -55 to 150 -55 to 150 P-channel -16 ±8 -2.5 -2 -10 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 110 Unit ℃/W Data and specifications subject to change without notice 200701051-1/7 Datasheet pdf - http://www.DataSheet4U.co.kr/ AP2531GY N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 16 0.2 - Typ. 0.01 9 7 0.6 2 6 11 17 3 360 ...