Document
AUTOMOTIVE GRADE
AUIRFS6535 AUIRFSL6535
300V 148m 185m 19A
Features
● ● ● ● ● ● ●
Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
HEXFET® Power MOSFET
D
G S
V(BR)DSS RDS(on) typ. max. ID
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Base part number AUIRFSL6535 AUIRFS6535 Package Type Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right
www.DataSheet.net/
D
D
G
D
S G D
S
D2Pak AUIRFS6535
TO-262 AUIRFSL6535
G Gate
D Drain
S Source
Orderable Part Number Quantity 50 50 800 800
TO-262 D2Pak
AUIRFSL6535 AUIRFS6535 AUIRFS6535TRL AUIRFS6535TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (tested ) IAR EAR TJ T STG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
19 13 100 210 1.4 ± 20 216 310 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A W W/°C V mJ A mJ °C
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current
Ã
h
d
Repetitive Avalanche Energy Operating Junction and
g
Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case )
300
Thermal Resistance
RJC RJA Junction-to-Case
j
Parameter
Typ.
––– –––
Max.
0.71 40
Units
°C/W
Junction-to-Ambient (PCB Mount)
i
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2012 International Rectifier
July 23, 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/
AUIRFS/SL6535
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS / T J RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Thresh.