IRFS3806PBF

PD - 97310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFB3806PbF IRFS3806PbF IRFSL3806PbF HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S VDSS RDS(on) typ. max. ID D 60V 12.6mΩ 15.8mΩ 43A D D S G D G S G S D TO-220AB IRFB3806PbF D2Pak IRFS3806PbF TO-262 IRFSL3806PbF G D S Gate Drain Max. 43 31 170 71 0.47 ± 20 24 -55 to + 175 300 10lbxin (1.1Nxm) Source Units A W W/°C V V/ns °C Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG www.DataSheet.net/ Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f 73 25 7.1 mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA RθJA Parameter Junction-to-Case j Case-to-Sink, Flat Greased Surface, TO-220 Junction-to-Ambient, TO-220 ij Junction-to-Ambient (PCB Mount) , D Pak ij 2 Typ. ––– 0.50...