2N5400

2N5400 2N5400 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCEO VCBO Collector-Emitter Voltage Collector-Base Voltage 120 130 VEBO Emitter-Base Voltage 5.0 IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 600 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max 2N5400 625 5.0 83.3 200 Units V V V mA °C Units mW mW /°C °C/W °C/W © 2001 Fairchild Semiconductor Corporation 2N5400, Rev A 2N5400 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage V(BR)EBO ICBO Emitter-Base Breakdown Voltage Collector Cutoff Current IEBO Emitter Cuto...