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RFPA2089

RFMD

InGaP HBT POWER AMPLIFIER

RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz RFPA2089 InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz P...


RFMD

RFPA2089

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Description
RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz RFPA2089 InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features    -60dBc ACPR at 13dBm WCDMA 0.25W Output Power (P1dB) Excellent Linearity to DC Power Ratio High Gain: 17.5dB at 2.65GHz Single-Supply 5V Operation Class 2 (2000V) HBM ESD    Applications  1 RF Input Product Description 2 Functional Block Diagram 3 Driver Amplifier for Base Station Transceivers PA Stage for Commercial Wireless Infrastructure IF Amplifier GSM, DCS, PCS, UMTS, WiMAX, LTE Transceiver Applications GND RF Output    The RFPA2089 is a single-stage InGaP HBT power amplifier specifically designed for wireless infrastructure applications. It offers high-gain linear operation at a comparably low DC power making it ideal for next generation radios requiring high efficiency. Its external matching allows for use across various radio platforms. www.DataSheet.net/ Ordering Information RFPA2089SR RFPA2089SQ RFPA2089TR7 RFPA2089TR13 RFPA2089PCK-410 RFPA2089PCK-411 RFPA2089PCK-412 7” Reel with 100 pieces Sample bag with 25 pieces 7” Reel with 750 pieces 13” Reel with 2500 pieces 2.11GHz to 2.17GHz PCBA with 5-piece sample bag 2.6GHz to 2.7GHz PCBA with 5-piece sample bag 869MHz to 894MHz PCBA with 5-piece sample bag Optimum Technology Matching® Applied  DS120620 GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT RF MICRO DEVICES®, RFMD®, Opti...




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