Document
Preliminary Datasheet
RJP60D0DPK
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.3.00 Jul 13, 2011
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C
G
1. Gate 2. Collector 3. Emitter
1
2
3
E
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Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VCES VGES IC IC ic(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 600 ±30 45 22 90 140 0.89 150 –55 to +150 Unit V V A A A W °C/ W °C °C
R07DS0166EJ0300 Rev.3.00 Jul 13, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJP60D0DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc Min — — 4.0 — — — — — — — — — — — — 3.0 Typ — — — 1.6 2.0 1050 70 32 45 6 20 35 20 90 70 5.0 Max 5 ±1 6.0 2.2 — — — — — — — — — — — — Unit A A V V V pF pF pF nC nC nC ns ns ns ns s Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 22 A, VGE = 15 V Note3 IC = 45 A, VGE = 15 V Note3 VCE = 20 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 22 A VCC = 300 V, VGE = 15 V IC = 22 A Rg = 5 Inductive load) VCC 360 V, VGE = 15 V
Short circuit withstand time Notes: 3. Pulse test
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R07DS0166EJ0300 Rev.3.00 Jul 13, 2011
Page 2 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJP60D0DPK
Preliminary
Main Characteristics
Collector Dissipation vs. Case Temperature
200 50
Maximum DC Collector Current vs. Case Temperature
Collector Dissipation Pc (W)
160
Collector Current IC (A)
0 25 50 75 100 125 150 175
40
120
30
80
20
40
10
0
0 0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000 100
Turn-off SOA
Collector Current IC (A)
Collector Current IC (A)
100
10 0μ s
80
PW
=
10
μs
60
10
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40
1 Tc = 25°C Single pulse 10 100 1000
20
0.1 1
0 0 200 400 600 800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Pulse Test Ta = 25°C 15 V 60 18 V 40 VGE = 8 V 20 12 V 80 10 V
Typical Output Characteristics
Pulse Test Ta = 150°C 15 V 60 18 V 40 VGE = 8 V 20 10 V 12 V
80
Collect.