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RJP60D0DPK Dataheets PDF



Part Number RJP60D0DPK
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel IGBT
Datasheet RJP60D0DPK DatasheetRJP60D0DPK Datasheet (PDF)

Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E www.DataSheet.net/ Absolut.

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Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES VGES IC IC ic(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 600 ±30 45 22 90 140 0.89 150 –55 to +150 Unit V V A A A W °C/ W °C °C R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJP60D0DPK Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc Min — — 4.0 — — — — — — — — — — — — 3.0 Typ — — — 1.6 2.0 1050 70 32 45 6 20 35 20 90 70 5.0 Max 5 ±1 6.0 2.2 — — — — — — — — — — — — Unit A A V V V pF pF pF nC nC nC ns ns ns ns s Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 22 A, VGE = 15 V Note3 IC = 45 A, VGE = 15 V Note3 VCE = 20 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 22 A VCC = 300 V, VGE = 15 V IC = 22 A Rg = 5  Inductive load) VCC  360 V, VGE = 15 V Short circuit withstand time Notes: 3. Pulse test www.DataSheet.net/ R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Page 2 of 6 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJP60D0DPK Preliminary Main Characteristics Collector Dissipation vs. Case Temperature 200 50 Maximum DC Collector Current vs. Case Temperature Collector Dissipation Pc (W) 160 Collector Current IC (A) 0 25 50 75 100 125 150 175 40 120 30 80 20 40 10 0 0 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area 1000 100 Turn-off SOA Collector Current IC (A) Collector Current IC (A) 100 10 0μ s 80 PW = 10 μs 60 10 www.DataSheet.net/ 40 1 Tc = 25°C Single pulse 10 100 1000 20 0.1 1 0 0 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Pulse Test Ta = 25°C 15 V 60 18 V 40 VGE = 8 V 20 12 V 80 10 V Typical Output Characteristics Pulse Test Ta = 150°C 15 V 60 18 V 40 VGE = 8 V 20 10 V 12 V 80 Collect.


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