IGBT
Preliminary Datasheet
RJP1CS08DWT/RJP1CS08DWA
1250V - 200A - IGBT Application: Inverter
Features
Low collector to emi...
Description
Preliminary Datasheet
RJP1CS08DWT/RJP1CS08DWA
1250V - 200A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012
Outline
Die: RJP1CS08DWT-80
2 C
Wafer: RJP1CS08DWA-80
3
2
3 1G 1 3 E 3
1. Gate 2. Collector (The back) 3. Emitter
3
www.DataSheet.net/
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 1250 ±30 400 200 150 Unit V V A A C
Notes: 1. This data is a regulated value in Package (at Tc = 25C).
R07DS0831EJ0001 Rev.0.01 Jul 05, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJP1CS08DWT/RJP1CS08DWA
Preliminary
Electrical Characteristics (These data are an actual measurement value in package.)
(Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf tsc Min — — 5.0 — — — — — — — — 10 Typ — — — 1.8 19.0 0.56 0.45 140 120 620 120 — Max 1 ±1 6.8 — — — — — — — — — Unit A A V V nF nF nF ns ns ns ns s Test Conditions VCE = 1250 V, VGE = 0 VGE = ±30 V, VCE = 0...
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