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RJP65S08DWA

IGBT

Description

Preliminary Datasheet RJP65S08DWT/RJP65S08DWA 650V - 200A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.) R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S08DWT-80 2 C Wafer: RJP65S08...

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