Document
Preliminary Datasheet
RJH60F5BDPQ-A0
600V - 40A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0631EJ0100 Rev.1.00 Feb 17, 2012
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
C
4 G
1. Gate 2. Collector 3. Emitter 4. Collector
E
1 2
3
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Absolute Maximum Ratings
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-cd Tj Tstg Ratings 600 ±30 80 40 160 100 260.4 0.48 1.1 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C
R07DS0631EJ0100 Rev.1.00 Feb 17, 2012
Page 1 of 8
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH60F5BDPQ-A0
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF trr Min 4 Typ 1.37 1.7 2780 122 43 53 34 95 68 2.5 25 Max 100 ±1 8 1.8 3.0 Unit A A V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 40 A, VGE = 15 V Note3 IC = 80 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5 Note3, Inductive load IF = 30 A
Note3
C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test
IF = 30 A diF/dt = 100 A/s
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R07DS0631EJ0100 Rev.1.00 Feb 17, 2012
Page 2 of 8
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH60F5BDPQ-A0
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000 160
Typical Output Characteristics
Pulse Test Ta = 25°C 120 11 V 13 V 15 V 80 9V 9.5 V 10.5 V 10 V
Collector Current IC (A)
100
PW
=
10
μs
10
1 Tc = 25°C Single pulse 10 100 1000
Collector Current IC (A)
0μ 10 s
40
8.5 V VGE = 8 V
0.1 1
0 0 1 2 3 4 5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
160
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage VCE(sat) (V)
3.0 Ta = 25°C Pulse Test 2.6 IC = 20 A 40 A 80 A
Collector Current IC (A)
P e Test Vuls CE = 10 V T a =e 25 °e C P uls T st 120
2.2
80 Tc = 75°C 40 25°C 0 2 –25°C
1.8
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1.4
1.0 6 8 10 12 14 16 18 20
4
6
8
10
12
Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage VCE(sat) (V)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 −25 40 A VGE = 15 V Pulse Test IC = 80 A
Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical)
10 VCE = 10 V Pulse Test 8 IC = 10 mA
Gate to Emitter Cutoff Voltage VGE(off) (V)
6 1 mA
4
20 A
2
0
25
50
75
100 125 150
0 −25
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
Junction Temparature Tj (°C)
R07DS0631EJ0100 Rev.1.00 Feb 17, 2012
Page 3 of 8
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH60F5BDPQ-A0
Preliminary
Typical Capacitance vs. Collector to Emitter Voltage
10000 VGE = 0 V f = 1 MHz
Forward Current vs. Forward Voltage (Typical)
100 VGE = 0 V Ta = 25°C Pulse Test
Forward Current IF (A)
Cies
Capacitance C (pF)
80
1000
60
40
100 Coes Cres 100 150 200 250 300
20 0 0 1 2 3 4 5
Ta = 25°C 10 0 50
C-E Diode Forward Voltage VCEF (V)
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage VCE (V)
VGE VCE VCC = 300 V 600 V 400 8
600
12
200
VCC = 600 V 300 V IC = 40 A Ta = 25°C
4
Gate to Emitter Voltage VGE (V)
800
16
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0
0
20
40
60
80
0 100
Gate Charge Qg (nc)
R07DS0631EJ0100 Rev.1.00 Feb 17, 2012
Page 4 of 8
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH60F5BDPQ-A0
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C
VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C 1000
tf 100 td(off) td(on) tr tr includes the diode recovery 10 1 10 100
Eoff
100
Eon
Eon includes the diode recovery 10 1 10 100
Collector .