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RJH60F5BDPQ-A0 Dataheets PDF



Part Number RJH60F5BDPQ-A0
Manufacturers Renesas
Logo Renesas
Description IGBT
Datasheet RJH60F5BDPQ-A0 DatasheetRJH60F5BDPQ-A0 Datasheet (PDF)

Preliminary Datasheet RJH60F5BDPQ-A0 600V - 40A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0631EJ0100 Rev.1.00 Feb 17, 2012 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-24.

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Preliminary Datasheet RJH60F5BDPQ-A0 600V - 40A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0631EJ0100 Rev.1.00 Feb 17, 2012 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW  5 s, duty cycle  1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-cd Tj Tstg Ratings 600 ±30 80 40 160 100 260.4 0.48 1.1 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C R07DS0631EJ0100 Rev.1.00 Feb 17, 2012 Page 1 of 8 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH60F5BDPQ-A0 Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF trr Min   4            Typ    1.37 1.7 2780 122 43 53 34 95 68 2.5 25 Max 100 ±1 8 1.8         3.0  Unit A A V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 40 A, VGE = 15 V Note3 IC = 80 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5  Note3, Inductive load IF = 30 A Note3 C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test IF = 30 A diF/dt = 100 A/s www.DataSheet.net/ R07DS0631EJ0100 Rev.1.00 Feb 17, 2012 Page 2 of 8 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH60F5BDPQ-A0 Preliminary Main Characteristics Maximum Safe Operation Area 1000 160 Typical Output Characteristics Pulse Test Ta = 25°C 120 11 V 13 V 15 V 80 9V 9.5 V 10.5 V 10 V Collector Current IC (A) 100 PW = 10 μs 10 1 Tc = 25°C Single pulse 10 100 1000 Collector Current IC (A) 0μ 10 s 40 8.5 V VGE = 8 V 0.1 1 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 160 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) 3.0 Ta = 25°C Pulse Test 2.6 IC = 20 A 40 A 80 A Collector Current IC (A) P e Test Vuls CE = 10 V T a =e 25 °e C P uls T st 120 2.2 80 Tc = 75°C 40 25°C 0 2 –25°C 1.8 www.DataSheet.net/ 1.4 1.0 6 8 10 12 14 16 18 20 4 6 8 10 12 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 −25 40 A VGE = 15 V Pulse Test IC = 80 A Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 10 VCE = 10 V Pulse Test 8 IC = 10 mA Gate to Emitter Cutoff Voltage VGE(off) (V) 6 1 mA 4 20 A 2 0 25 50 75 100 125 150 0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Junction Temparature Tj (°C) R07DS0631EJ0100 Rev.1.00 Feb 17, 2012 Page 3 of 8 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH60F5BDPQ-A0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage 10000 VGE = 0 V f = 1 MHz Forward Current vs. Forward Voltage (Typical) 100 VGE = 0 V Ta = 25°C Pulse Test Forward Current IF (A) Cies Capacitance C (pF) 80 1000 60 40 100 Coes Cres 100 150 200 250 300 20 0 0 1 2 3 4 5 Ta = 25°C 10 0 50 C-E Diode Forward Voltage VCEF (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Collector to Emitter Voltage VCE (V) VGE VCE VCC = 300 V 600 V 400 8 600 12 200 VCC = 600 V 300 V IC = 40 A Ta = 25°C 4 Gate to Emitter Voltage VGE (V) 800 16 www.DataSheet.net/ 0 0 20 40 60 80 0 100 Gate Charge Qg (nc) R07DS0631EJ0100 Rev.1.00 Feb 17, 2012 Page 4 of 8 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH60F5BDPQ-A0 Switching Characteristics (Typical) (1) 1000 Preliminary Switching Characteristics (Typical) (2) 10000 Swithing Energy Losses E (μJ) Switching Times t (ns) VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C 1000 tf 100 td(off) td(on) tr tr includes the diode recovery 10 1 10 100 Eoff 100 Eon Eon includes the diode recovery 10 1 10 100 Collector .


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