RJH6086BDPK

Preliminary Datasheet RJH6086BDPK 600 V - 45 A - IGBT High Speed Power Switching Features  Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load)  Low on-state voltage  Fast recovery diode R07DS0470EJ0100 Rev.1.00 Sep 28, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction temperature Storage temperature www.DataSheet.net/ (Tc = 25°C) Symbol VCES VGES IC ic(peak) Note1 IDF(peak) Note2 PC j-c Tj Tstg Ratings 600 ±30 45 90 90 198.4 0.63 150 –55 to +150 Unit V V A A A W /W °C °C Notes: 1. Pulse width limited by safe operating area. 2. Pulse width limited by maximum junction temperature. R07DS0470EJ0100 Rev.1.00 Sep 28, 2011 Page 1 of 7 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH6086BDPK Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to Emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF trr Min   3.0          — —...