RJH60V1BDPP-M0

Preliminary Datasheet RJH60V1BDPP-M0 600V - 8A - IGBT Application: Inverter Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0759EJ0100 Rev.1.00 May 25, 2011 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 www.DataSheet.net/ E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iD(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 16 8 32 8 32 30 4.1 2.5 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C R07DS0759EJ0100 Rev.1.00 May 25, 2011 Page 1 of 9 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH60V1BDPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown vol...