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RJH60M1DPP-M0

Part Number	RJH60M1DPP-M0
Manufacturer	Renesas
Description	IGBT
Features	 Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = ...
Published	Jul 20, 2012
Datasheet	RJH60M1DPP-M0 PDF File

Features

 Short circuit withstand time (8 s typ.)
 Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode (75 ns typ.) in one package
 Trench gate and thin wafer technology
 H...

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RJH60M1DPP-M0 IGBT - Renesas

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