RJH1BF7RDPQ-80

Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25°C) Gate to emitter voltage rating ±30 V Pb-free lead plating R07DS0394EJ0100 Rev.1.00 May 16, 2011 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. Symbol VCES VGES IC IC ic(peak) Note1 iDF PC θj-c Tj Tstg Ratings 1100 ±30 60 35 100 25 250 0.5 150 –55 to +150 Unit V V A A A A W °C/W °C °C R07DS0394EJ0100 Rev.1.00 May 16, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH1BF7RDPQ-80 Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(s...