High Speed Power Switching
Preliminary Datasheet
RJH1BF6RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonan...
Description
Preliminary Datasheet
RJH1BF6RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Tj = 25°C) Gate to emitter voltage rating ±30 V Pb-free lead plating R07DS0393EJ0100 Rev.1.00 May 16, 2011
Outline
RENESAS Package code: PRSS0003ZE-A (Package name: TO-247)
C
4 G
1. Gate 2. Collector 3. Emitter 4. Collector
E
1 2
3
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Absolute Maximum Ratings
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. Symbol VCES VGES IC IC ic(peak) Note1 iDF PC θj-c Tj Tstg Ratings 1100 ±30 55 30 100 20 227.2 0.55 150 –55 to +150 Unit V V A A A A W °C/W °C °C
R07DS0393EJ0100Rev.1.00 May 16, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH1BF6RDPQ-80
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VC...
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