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RJH6088BDPK

High Speed Power Switching

Description

Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) Low on-state voltage Fast recovery diode R07DS0390EJ0100 Rev.1.00 May 11, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G...

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RJH6088BDPK High Speed Power Switching - Renesas

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