High Speed Power Switching
Preliminary Datasheet
RJH60F7DPQ-A0
0B
600 V - 50 A - IGBT High Speed Power Switching
Features
1B
R07DS0328EJ0200 Rev...
Description
Preliminary Datasheet
RJH60F7DPQ-A0
0B
600 V - 50 A - IGBT High Speed Power Switching
Features
1B
R07DS0328EJ0200 Rev.2.00 Jul 22, 2011
Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
2B
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
C
4 G
1. Gate 2. Collector 3. Emitter 4. Collector
E
1 2
3
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Absolute Maximum Ratings
3B
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-cd Tj Tstg Ratings 600 ±30 90 50 180 100 328.9 0.38 2.0 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C
4B
R07DS0328EJ0200 Rev.2.00 Jul 22, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH60F7DPQ-A0
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector t...
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