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CGH40035F

CREE
Part Number CGH40035F
Manufacturer CREE
Description RF Power GaN HEMT
Published Jul 11, 2012
Detailed Description CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transis...
Datasheet PDF File CGH40035F PDF File

CGH40035F
CGH40035F

Overview
CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and compressed amplifier circuits.
The transistor is available in a screw-down, flange package.
Package Type : 440193 PN: CGH4003 5F FEATURES • Up to 4 GHz Operation • 15 dB Small Signal Gain at 2.
0 GHz • 13 dB Small Signal Gain at 4.
0 GHz • 45 W typical PSAT • 60 % Efficiency at PSAT • 28 V Operation APPLI...


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