HMC999

HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Typical Applications The HMC999 is ideal for: Features High P1dB Output Power: 38 dBm High Psat Output Power: 40 dBm High Output IP3: 47 dBm High Gain: 11 dB Supply Voltage: +28V, +40V or +48V @ 1100 mA 50 Ohm Matched Input/Output Die Size: 3.66 x 1.91 x 0.1 mm Amplifiers - Linear & Power - Chip Test Instrumentation Military Communications Jammers and Decoys Radar, EW & ECM Subsystems Space Functional Diagram General Description The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier which operates between 0.01 and 10 GHz. The amplifier provides 11 dB of gain, 47 dBm output IP3 and 38 dBm of output power at 1 dB gain compression while requiring 1100 mA from a +48 V supply. The HMC999 amplifier provides 10 Watts of saturated power in a chip area only 7 mm2, equating to a power density of 1.5 W/mm2 over 3 decades of bandwidth. All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). www.DataSheet.net/ Electrical Specifications, TA = +25°C [2], Vdd = +48 V, Vgg2 = +22 V, Idd = 1100 mA* [1] Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = 48V, Vgg = 22V Typ.) 36.5 10.5 Min. Typ. 0.01 - 2 12.5 ±0.8 0.017 20 13 38.5 40.5 48 1100 36 9 Max. Min. Typ...