2N5294 2N5296 2N5298
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR...
2N5294 2N5296 2N5298
NPN SILICON
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5294, 2N5296, and 2N5298 types are
NPN silicon
transistors manufactured by the epitaxial base process, and designed for applications that require power amplifier and medium speed switching capabilities.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage (RBE=100Ω) Collector-Emitter Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEV VCER VCEO IC IB PD TJ, Tstg ΘJA ΘJC
2N5294 80 80 75 70
2N5296 60 60 50 40 4.0 2.0 36
-65 to +150 70 3.47
2N5298 80 80 70 60
UNITS V V V V A A W °C
°C/W °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5294
2N5296
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICEV
VCE=35V, VEB=1.5V
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- 2.0
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