3DD60

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD60 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify,power adjustment,DC conversion. 4. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: Parameter name Collector-Emitter Voltage Emitter-Base Voltage Max. Collector Current Max. Collector Dissipation Junction Temperature Storage Temperature Collector-Emitter Leakage Current Collector- Emitter Saturation Voltage Drop DC Current Gain Collector-Emitter Breakdown Voltage E-Base Breakdown Voltage Symbols Unit Specifications A B C D E (Ta = 25°C ) Test Condition VCEO VEBO ICM PCM Tjm Tstg ICEO VCE(sat) hFE V V A W °C °C mA V 30 50 80 110 3 2.5 25 175 -55~+175 Max.:1.5 Max.:1.2 www.DataSheet.net/ 150 Tc:75°C VCE=20V IC=1.25A,IB=0.25A VCE=5V,IC=1.25A D E Min.:10 C V(BR)CEO V V(BR)EBO V A B 30 50 80 3 110 150 IC=5mA IE=10mA hFE Colored: Color Brown 10~20 Red 20~30 Orange 30~ hFE Outline and Dimensions: Contact:Jiandong Lei Tel.:+86-917-6293906 Fax:+86-917-6297928 [email protected] 34 Datasheet pdf - http://www.DataSheet4U.co.kr/ ...