IGBT PIM MODULE
Bulletin I27303 01/07
GB30RF60K
IGBT PIM MODULE
Features
• • • • Low VCE (on) Non Punch Through IGBT Technology Low Dio...
Description
Bulletin I27303 01/07
GB30RF60K
IGBT PIM MODULE
Features
Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10μs Short Circuit Capability Square RBSOA
VCES = 600V IC = 27A @ TC=80°C tsc > 10μs @ TJ =150°C ECONO2 PIM VCE(on) typ. = 2.04V
HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient Ceramic DBC Substrate Low Stray Inductance Design TOTALLY LEAD-FREE
Benefits
Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance
23
R 24
Absolute Maximum Ratings
Parameter
Inverter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current Diode Maximum Forward Current Power Dissipation Input Rectifier Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) I2 t (Non Repetitive) Brake Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current Power Dissipation Repetitive Peak Reverse Voltage Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage
Symbol
VCES VGES IC
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Test Conditions
Ratings
600 ±20
Units
V A
Continuos Pulsed One IGBT 50/60Hz sine pulse sine pulse
25°C / 80°C 25°C 25°C 25°C 80°C
50 / 27 100 100 129 800 30 310 525 600 ±20
ICM IFM PD V RRM IF(AV) IFSM I2t VCES VGES IC ICM PD V RRM TJ TSTG VISOL
W V A A2s V A W V °C V
Rated VR...
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