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TQM7M5005H

TriQuint Semiconductor

Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module

TQM7M5005H Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block Diagram Features DCS / PCS In DCS / P...


TriQuint Semiconductor

TQM7M5005H

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TQM7M5005H Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block Diagram Features DCS / PCS In DCS / PCS Out Mode Select Band Select VBATT VRAMP TX_EN Power Control Logic GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005H is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining high GSM/GPRS efficiency. www.DataSheet.net/ Very compact size – 5×5×1.0 mm3. High GSM efficiency – GSM 850 55%, GSM900 55%, DCS 49%, PCS 49%. High EDGE efficiency – GSM 850 22%, GSM 900 22%, DCS 25%, PCS 24% Positive supply voltage – 3.0 to 4.5 V 50 Ω input and output impedances GPRS class 12. CMOS band select and internal closed-loop power control for GSM Operation. High-reliability InGaP technology. Ruggedness 10:1 No external Vref Required The module incorporates two highly integrated InGaP power amplifier die with a CMOS controller. The CMOS controller implements a fully integrated closed-loop power control within the module for GSM Operation. This eliminates the need for any external couplers, power detectors, current sensing etc., to assure the output power level. The latter is set directly from the Vramp input from the DAC. The module has Tx enable, band select, mode (EDGE or GSM) inputs. Module construction is a low-profile over-molded land-grid array on a halogen-free laminate. Applica...




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