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CLY5 Dataheets PDF



Part Number CLY5
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description GaAs FET
Datasheet CLY5 DatasheetCLY5 Datasheet (PDF)

CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its easy matching and excellent linearity. The CLY5 exhibits +26.5 dBm output power with +3V Vds at 1.8 GHz with an associated gain of 9.5 dB. Power added efficiencies to 55% are achievable. Applications • Power a.

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CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its easy matching and excellent linearity. The CLY5 exhibits +26.5 dBm output power with +3V Vds at 1.8 GHz with an associated gain of 9.5 dB. Power added efficiencies to 55% are achievable. Applications • Power amplifier for mobile phones Power Amplifiers for WLAN transceivers Driver Amplifiers for WLAN or mobile phone basestations • • Features • • • • • For frequencies up to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT 26.5 dBm typical at VD=3V, f=1.8GHz High efficiency: better than 55 % Low Cost www.DataSheet.net/ Package Outline, SOT223 Pin Configuration: 1: Gate 2 & 4: Source 3: Drain For additional information and latest specifications, see our website: www.triquint.com Revision E, March 20, 2007 2 Datasheet pdf - http://www.DataSheet4U.co.kr/ CLY5 Datasheet Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Pulse peak power Total power dissipation (Ts < 80 °C) Ts: Temperature at soldering point Symbol VDS VDG VGS ID TCh Tstg PPulse Ptot Values 9 12 -6 1.2 150 -55...+150 9 2 Unit V V V A °C °C W W Thermal Resistance Channel-soldering point RthChS ≤35 K/W www.DataSheet.net/ For additional information and latest specifications, see our website: www.triquint.com Revision E, March 20, 2007 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ CLY5 Datasheet Electrical Characteristics (TA = 25°C , unless otherwise specified) Parameter Drain-source saturation current VDS = 3 V VDS = 3 V VDS = 3 V VDS= 3 V VGS = 0 V Symbol IDSS ID IG VGS(p) G f = 1.8 GHz min 600 -3.8 10.5 typ 800 10 5 -2.8 11.0 max 1000 100 20 -1.8 - Unit mA µA µA V dB Drain-source pinch-off current VGS = -3.8 V VGS = -3.8 V ID=100µA Gate pinch-off current Pinch-off Voltage Small Signal Gain*) VDS = 3 V ID = 350 mA Pin = 0 dBm Small Signal Gain*) VDS = 5 V ID = 350 mA Pin = 0 dBm f = 1.8 GHz G 11.5 12.0 - dB Small Signal Gain **) VDS = 3 V ID = 350 mA Pin = 0 dBm f = 1.8 GHz Gp 9.0 9.5 - dB Output Power VDS = 3 V ID = 350 mA Pin = 19 dBm f = 1.8 GHz Po www.DataSheet.net/ 26.5 27 - dBm Output Power VDS = 5 V ID = 350 mA Pin = 21 dBm f = 1.8 GHz Po 29.5 30 - dBm 1dB-Compression Point VDS = 3 V VDS = 5 V ID = 350 mA ID = 350 mA f = 1.8 GHz P1dB P1dB f = 1.8GHz 40 26.5 30 55 - dBm dBm % 1dB-Compression Point Power Added Efficiency VDS = 5 V ID = 350 mA Pin = 21 dBm f = 1.8 GHz PAE Noise figure VDS = 5 V ID = 350 mA f = 1.8GHz NF 1.72 dB *) Matching conditions for maximum small signal gain (not identical with power matching conditions!) **) Power matching conditions: f=1.8GHz: Source Match: Γms : MAG 0.58; ANG -143°; Load Match: Γml : MAG 0.76; ANG -116° Electrical Characteristics (cont) For additional information and latest specifications, see our website: www.triquint.com Revision E, March 20, 2007 4 Datasheet pdf - http://www.DataSheet4U.co.kr/ CLY5 Datasheet Compression Power vs. Drain-Source Voltage f = 1.8GHz; IDS0=350mA 35 30 P1DB[dBm] 70 60 50 30 20 10 0 1 2 3 4 5 6 7 8 Drain-Source Voltage [V] PAE[%] 25 20 15 10 5 0 40 P1dB [dBm] P1dB-PAE [%] 2 1,75 1,5 P1dB[W] 16 14 12 Gain[dB] 1,25 1 0,75 0,5 0,25 0 1 2 3 4 VD[V] www.DataSheet.net/ 10 8 6 4 2 0 5 6 7 8 P1dB [W] Gain [dB] Output Characteristics: 1,2 Draincurrent [A] 1,0 0,8 0,6 0,4 0,2 0,0 0 1 2 3 4 Drain-Source Voltage [V] 5 6 VG=0 V VG=-0,5V VG=-1,0V VG=-1,5V VG=-2V Ptot DC Electrical Characteristics (cont) For additional information and latest specifications, see our website: www.triquint.com Revision E, March 20, 2007 5 Datasheet pdf - http://www.DataSheet4U.co.kr/ CLY5 Datasheet Typical Common Source S-Parameters and noise data VDS = 3 V f MHz 100 150 200 250 300 400 500 600 700 800 900 1000 1200 1400 1500 1600 1800 2000 2200 2400 2500 3000 3500 4000 4500 5000 5500 6000 S11 MAG ANG 0.9702 -30.6 0.9597 -44.7 0.9136 -59.6 0.8786 -71.8 0.8374 -83.2 0.7927 -104.6 0.7507 -122.7 0.7204 -138.3 0.6962 -151.7 0.6923 -163.7 0.6833 -174.6 0.6829 175.9 0.6922 159.0 0.7041 144.0 0.7130 137.8 0.7197 131.2 0.7414 119.9 0.7622 109.5 0.7798 100.5 0.8001 92.3 0.8085 88.3 0.8413 71.7 0.8723 57.7 0.8837 45.5 0.8914 34.7 0.8985 24.3 0.9069 13.6 0.9159 2.7 ID = 350 mA Zo = 50 Ω S22 MAG 0.2969 0.3155 0.3309 0.3402 0.3509 0.3793 0.3970 0.4130 0.4283 0.4377 0.4501 0.4596 0.4811 0.5035 0.5133 0.5259 0.5478 0.5701 0.5931 0.6156 0.6265 0.6780 0.7216 0.7539 0.7710 0.7777 0.7907 0.8089 ANG -175.8 -177.3 -175.1 -176.1 -177.6 179.2 176.2 172.4 168.0 164.3 160.8 157.2 150.5 143.3 140.4 136.9 130.4 123.9 117.7 111.3 108.2 93.9 81.3 69.6 57.9 46.7 34.8 22.2 S21 MAG ANG 14.9423 158.4 14.2076 148.9 13.3921 140.2 12.5257 131.9 11.6493 124.9 10.0502 111.8 8.7221.


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